A comparison of arsenic and phosphorus extension by room temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions

Sasaki, YuichiroYuichiroSasakiRitzenthaler, RomainRomainRitzenthalerDe Keersgieter, AnAnDe KeersgieterChiarella, ThomasThomasChiarellaKubicek, StefanStefanKubicekRosseel, ErikErikRosseelWaite, AndrewAndrewWaitedel Agua Borniquel, Jose IgnacioJose Ignaciodel Agua BorniquelColombeau, BenjaminBenjaminColombeauChew, Soon AikSoon AikChewKim, Min-SooMin-SooKimSchram, TomTomSchramDemuynck, StevenStevenDemuynckVandervorst, WilfriedWilfriedVandervorstHoriguchi, NaotoNaotoHoriguchiMocuta, DanDanMocutaMocuta, AndaAndaMocutaThean, AaronAaronThean2021-10-222021-10-222015-06https://imec-publications.be/handle/20.500.12860/25864A comparison of arsenic and phosphorus extension by room temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensionsProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7223691