Lan, Hao-YuHao-YuLanYang, Shao-HengShao-HengYangKantre, Karim-AlexandrosKarim-AlexandrosKantreCott, DaireDaireCottTripathi, RahulRahulTripathiAppenzeller, JoergJoergAppenzellerChen, ZhihongZhihongChen2025-02-022025-02-022025-JAN 2WOS:001404843400001https://imec-publications.be/handle/20.500.12860/45153Reliability of high-performance monolayer MoS<sub>2</sub> transistors on scaled high-κ HfO<sub>2</sub>Journal article10.1038/s41699-025-00527-7WOS:001404843400001COMPACT-PHYSICS FRAMEWORK2-DIMENSIONAL MATERIALSINSTABILITYHYSTERESISDEPENDENCETIME