HF-last wet clean in combination with a low temperature GeH4-assisted HCl in-situ clean prior to Si0.8Ge0.2-on-Si epitaxial growth

Wostyn, KurtKurtWostynDhayalan, Sathish KumarSathish KumarDhayalanHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooDouhard, BastienBastienDouhardMoussa, AlainAlainMoussaRondas, DirkDirkRondasKenis, KarineKarineKenisMertens, PaulPaulMertensHolsteyns, FrankFrankHolsteynsDe Gendt, StefanStefanDe GendtProfijt, HaraldHaraldProfijt2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24833HF-last wet clean in combination with a low temperature GeH4-assisted HCl in-situ clean prior to Si0.8Ge0.2-on-Si epitaxial growthProceedings paperhttp://www.scientific.net/SSP.219.20