Excellent Roff/Ron ratio and short programming time in Cu/Al2O3-based conductive-bridge RAM under low-current (10μA) operation

Belmonte, AttilioAttilioBelmonteFantini, AndreaAndreaFantiniDegraeve, RobinRobinDegraeveRedolfi, AugustoAugustoRedolfiHoussa, MichelMichelHoussaJurczak, GosiaGosiaJurczakGoux, LudovicLudovicGoux2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/24980Excellent Roff/Ron ratio and short programming time in Cu/Al2O3-based conductive-bridge RAM under low-current (10μA) operationOral presentation