Ferroelectric FET with Gd-doped HfO2: A Step Towards Better Uniformity and Improved Memory Performance

Ronchi, NicoloNicoloRonchiRagnarsson, Lars-AkeLars-AkeRagnarssonBreuil, LaurentLaurentBreuilBanerjee, KaustuvKaustuvBanerjeeMcMitchell, SeanSeanMcMitchellO'Sullivan, BarryBarryO'SullivanMilenin, AlexeyAlexeyMileninKundu, ShreyaShreyaKunduPak, MuratMuratPakVan den Bosch, GeertGeertVan den BoschVan Houdt, JanJanVan Houdt2022-03-142022-03-1420212161-4636WOS:000712433900011https://imec-publications.be/handle/20.500.12860/39445Ferroelectric FET with Gd-doped HfO2: A Step Towards Better Uniformity and Improved Memory PerformanceProceedings paper10.1109/SNW51795.2021.00012978-4-86348-781-9WOS:000712433900011