Detailed analysis of charge pumping and IdVg hysteresis for profiling traps in SiO2/HfSiO(N)

Sahhaf, SaharSaharSahhafDegraeve, RobinRobinDegraeveCho, Moon JuMoon JuChoDe Brabanter, K.K.De BrabanterRoussel, PhilippePhilippeRousselZahid, MohammedMohammedZahidGroeseneken, GuidoGuidoGroeseneken2021-10-182021-10-182010-120167-9317https://imec-publications.be/handle/20.500.12860/17927Detailed analysis of charge pumping and IdVg hysteresis for profiling traps in SiO2/HfSiO(N)Journal article