A practical alternating PSM modeling and OPC approach to deal with 3D mask effects for the 65nm node and beyond

Drapeau, MartinMartinDrapeauvan Adrichem, Paul.J.M.Paul.J.M.van AdrichemVan Look, LieveLieveVan LookKasprowicz, Bryan S.Bryan S.Kasprowicz2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10403A practical alternating PSM modeling and OPC approach to deal with 3D mask effects for the 65nm node and beyondProceedings paper