Afanas'ev, V. V.V. V.Afanas'evChou, H.-Y.H.-Y.ChouHoussa, M.M.HoussaLamagna, L.L.LamagnaLamperti, A.A.LampertiMolle, A.A.MolleVincent, BenjaminBenjaminVincentBrammertz, GuyGuyBrammertz2021-10-192021-10-1920110003-6951https://imec-publications.be/handle/20.500.12860/18450Transitivity of band offsets between semiconductor heterojunctions and oxide insulatorsJournal article