Sahhaf, SaharSaharSahhafDegraeve, RobinRobinDegraeveSrividya, VidyaVidyaSrividyaKaczer, BenBenKaczerGealy, DanDanGealyHoriguchi, NaotoNaotoHoriguchiTogo, MitsuhiroMitsuhiroTogoHoffmann, Thomas Y.Thomas Y.HoffmannGroeseneken, GuidoGuidoGroeseneken2021-10-182021-10-1820100741-3106https://imec-publications.be/handle/20.500.12860/17929Correlation between the Vth-adjustment of nMOSFETs with HfSiO gate oxide and the energy profile of high-k bulk trap densityJournal article