Diffusion mechanism of hydrogen through PECVD SiNx:H for a fast defect passivation of mc-Si solar cells

Dekkers, HaroldHaroldDekkersCarnel, LodewijkLodewijkCarnelBeaucarne, GuyGuyBeaucarneBeyer, W.W.Beyer2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10364Diffusion mechanism of hydrogen through PECVD SiNx:H for a fast defect passivation of mc-Si solar cellsProceedings paper