Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory

Chang, Ting-YuTing-YuChangWang, Kuan-ChiKuan-ChiWangLiu, Hsien-YangHsien-YangLiuHseun, Jing-HuaJing-HuaHseunPeng, Wei-ChengWei-ChengPengRonchi, NicoloNicoloRonchiCelano, UmbertoUmbertoCelanoBanerjee, KaustuvKaustuvBanerjeeVan Houdt, JanJanVan HoudtWu, Tian-LiTian-LiWu2023-12-202023-08-112023-09-112023-12-2020232079-4991WOS:001038850900001https://imec-publications.be/handle/20.500.12860/42325Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal MemoryJournal article10.3390/nano13142104WOS:001038850900001Electrical & electronic engineeringFERAMMEDLINE:37513115