Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers

Zhang, YanYanZhangFischetti, MassimoMassimoFischettiSoree, BartBartSoreeMagnus, WimWimMagnusHeyns, MarcMarcHeynsMeuris, MarcMarcMeuris2021-10-182021-10-1820090021-8979https://imec-publications.be/handle/20.500.12860/16604Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layersJournal article