First-principles study of the electronic properties of Ge dangling bonds at the (100) Si1xGex /SiO2 interfaces

Houssa, MichelMichelHoussaAfanasiev, ValeriValeriAfanasievStesmans, AndreAndreStesmansPourtois, GeoffreyGeoffreyPourtoisMeuris, MarcMarcMeurisHeyns, MarcMarcHeyns2021-10-172021-10-1720090003-6951https://imec-publications.be/handle/20.500.12860/15491First-principles study of the electronic properties of Ge dangling bonds at the (100) Si1xGex /SiO2 interfacesJournal article