RTP requirements for CMOS integration of dual work function phase controlled Ni-FUSI (fully silicided) gates with simultaneous silicidation of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiON

Lauwers, AnneAnneLauwersKittl, JorgeJorgeKittlMaex, KarenKarenMaex2021-10-172021-10-1720080255-5476https://imec-publications.be/handle/20.500.12860/13994RTP requirements for CMOS integration of dual work function phase controlled Ni-FUSI (fully silicided) gates with simultaneous silicidation of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiONJournal article