Direct Assessment of Defective Regions in Monolayer MoS2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements

Minj, AlbertAlbertMinjKoladi Mootheri, VivekVivekKoladi MootheriBanerjee, SreetamaSreetamaBanerjeeNalin Mehta, AnkitAnkitNalin MehtaSerron, JillJillSerronHantschel, ThomasThomasHantschelAsselberghs, IngeIngeAsselberghsGoux, LudovicLudovicGouxKar, Gouri SankarGouri SankarKarHeyns, MarcMarcHeynsLin, DennisDennisLin2024-09-242024-04-072024-09-2420241936-0851WOS:001195010700001https://imec-publications.be/handle/20.500.12860/43794Direct Assessment of Defective Regions in Monolayer MoS2 Field-Effect Transistors through In Situ Scanning Probe Microscopy MeasurementsJournal article10.1021/acsnano.4c03080WOS:001195010700001SINGLE-LAYER MOS2INDUCED PHOTOLUMINESCENCEEDGE STATESCONTACTCAPACITANCEBOUNDARIESGRAPHENEGAPMEDLINE:38556983