Dry-etch fin patterning of a sub-22nm node SRAM cell: EUV lithography new dry etch challenges

Altamirano Sanchez, EfrainEfrainAltamirano SanchezYamaguchi, Yoko YamaguchiYoko YamaguchiYamaguchiLindain, Jeffrey LindainJeffrey LindainLindainHoriguchi, NaotoNaotoHoriguchiErcken, MoniqueMoniqueErckenDemand, MarcMarcDemandBoullart, WernerWernerBoullart2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/18472Dry-etch fin patterning of a sub-22nm node SRAM cell: EUV lithography new dry etch challengesProceedings paper