Titanium silicide on Si:P with precontact amorphization implantation treatment: contact resistivity approaching 1×10-9 Ohm-cm²

Yu, HaoHaoYuSchaekers, MarcMarcSchaekersPeter, AntonyAntonyPeterPourtois, GeoffreyGeoffreyPourtoisRosseel, ErikErikRosseelLee, Joon-GonJoon-GonLeeSong, Woo-BinWoo-BinSongShin, Keo MyoungKeo MyoungShinEveraert, Jean-LucJean-LucEveraertChew, Soon AikSoon AikChewDemuynck, StevenStevenDemuynckKim, DaeyongDaeyongKimBarla, KathyKathyBarlaMocuta, AndaAndaMocutaHoriguchi, NaotoNaotoHoriguchiThean, AaronAaronTheanCollaert, NadineNadineCollaertDe Meyer, KristinKristinDe Meyer2021-10-232021-10-2320160018-9383https://imec-publications.be/handle/20.500.12860/27641Titanium silicide on Si:P with precontact amorphization implantation treatment: contact resistivity approaching 1×10-9 Ohm-cm²Journal articlehttp://ieeexplore.ieee.org/document/7725953/