Effects of Back-Gate Bias on the Mobility and Reliability of Junction-Less FDSOI Transistors for 3-D Sequential Integration

Wu, ZhichengZhichengWuFranco, JacopoJacopoFrancoVandooren, AnneAnneVandoorenRoussel, PhilippePhilippeRousselKaczer, BenBenKaczerLinten, DimitriDimitriLintenCollaert, NadineNadineCollaertGroeseneken, GuidoGuidoGroeseneken2022-03-022022-03-0220210018-9383WOS:000612147300002https://imec-publications.be/handle/20.500.12860/39231Effects of Back-Gate Bias on the Mobility and Reliability of Junction-Less FDSOI Transistors for 3-D Sequential IntegrationJournal article10.1109/TED.2020.3041813WOS:000612147300002