HBM ESD robustness of GaN-on-Si Schottky diodes

Chen, Shih-HungShih-HungChenGriffoni, AlessioAlessioGriffoniSrivastava, PuneetPuneetSrivastavaLinten, DimitriDimitriLintenThijs, StevenStevenThijsScholz, MirkoMirkoScholzMarcon, DenisDenisMarconGallerano, AntonioAntonioGalleranoLafonteese, DavidDavidLafonteeseConcannon, AnnAnnConcannonVashchenko, VladVladVashchenkoHopper, PeterPeterHopperBychikhin, SergeiSergeiBychikhinPogany, DionyzDionyzPoganyVan Hove, MarleenMarleenVan HoveDecoutere, StefaanStefaanDecoutereGroeseneken, GuidoGuidoGroeseneken2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/18663HBM ESD robustness of GaN-on-Si Schottky diodesProceedings paper