Simicic, MarkoMarkoSimicicWu, Wei-MinWei-MinWuChen, Shih-HungShih-HungChenJack, NathanNathanJackTamura, ShinichiShinichiTamuraShimada, YoheiYoheiShimadaSawada, MasanoriMasanoriSawadaLinten, DimitriDimitriLinten2021-10-272021-10-2720190739-5159https://imec-publications.be/handle/20.500.12860/34005Standard charged device model (CDM) ESD simulators used today cannot be used at wafer level and suffer from high zap-to-zap peak current variability at low voltages. The low-impedance contact CDM provides a solution to these problems. In this paper we evaluate its performance and propose a model for the setup.Proceedings paper10.23919/eos/esd.2019.8869976https://ieeexplore.ieee.org/document/8869976