Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates

Terzieva, ValentinaValentinaTerzievaSouriau, LaurentLaurentSouriauCaymax, MattyMattyCaymaxBrunco, DavidDavidBruncoMoussa, AlainAlainMoussaVan Elshocht, SvenSvenVan ElshochtLoo, RogerRogerLooMeuris, MarcMarcMeuris2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12967Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substratesOral presentation