Contact resistivity reduction on lowly-doped n-type Si using a low workfunction metal and a thin TiOX interfacial layer for doping-free Si solar cells

Cho, JinyounJinyounChoDebucquoy, MaartenMaartenDebucquoyRecaman Payo, MariaMariaRecaman PayoMalik, ShujaShujaMalikFilipic, MihaMihaFilipicSivaramakrishnan Radhakrishnan, HariharsudanHariharsudanSivaramakrishnan RadhakrishnanBearda, TwanTwanBeardaGordon, IvanIvanGordonSzlufcik, JozefJozefSzlufcikPoortmans, JefJefPoortmans2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/28029Contact resistivity reduction on lowly-doped n-type Si using a low workfunction metal and a thin TiOX interfacial layer for doping-free Si solar cellsProceedings paperhttp://www.sciencedirect.com/science/article/pii/S1876610217343394