Interface of GaN grown on Ge(111) by plasma assisted molecular beam epitaxy

Lieten, RubenRubenLietenRichard, OlivierOlivierRichardDegroote, StefanStefanDegrooteLeys, MaartenMaartenLeysBender, HugoHugoBenderBorghs, GustaafGustaafBorghs2021-10-192021-10-1920110022-0248https://imec-publications.be/handle/20.500.12860/19300Interface of GaN grown on Ge(111) by plasma assisted molecular beam epitaxyJournal articlehttp://dx.doi.org/10.1016/j.jcrysgro.2010.10.146