A new method to extract the LDD doping concentration on fully depleted SOI nMOSFETs at 300K

Nicolett, A. S.A. S.NicolettMartino, Joao AntonioJoao AntonioMartinoSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-142021-10-142000https://imec-publications.be/handle/20.500.12860/4620A new method to extract the LDD doping concentration on fully depleted SOI nMOSFETs at 300KProceedings paper