Porret, ClémentClémentPorretEveraert, Jean-LucJean-LucEveraertSchaekers, MarcMarcSchaekersRagnarsson, Lars-AkeLars-AkeRagnarssonHikavyy, AndriyAndriyHikavyyRosseel, ErikErikRosseelRengo, GianlucaGianlucaRengoLoo, RogerRogerLooKhazaka, R.R.KhazakaGivens, M.M.GivensPiao, XiaoyuXiaoyuPiaoMertens, SofieSofieMertensHeylen, NancyNancyHeylenMertens, HansHansMertensToledo de Carvalho Cavalcante, CamilaCamilaToledo de Carvalho CavalcanteSterckx, GuntherGuntherSterckxBrus, StephanStephanBrusNalin Mehta, AnkitAnkitNalin MehtaKorytov, MaximMaximKorytovBatuk, DmitryDmitryBatukFavia, PaolaPaolaFaviaLanger, RobertRobertLangerPourtois, GeoffreyGeoffreyPourtoisSwerts, JohanJohanSwertsDentoni Litta, EugenioEugenioDentoni LittaHoriguchi, NaotoNaotoHoriguchi2023-06-012023-05-252023-06-0120222380-9248WOS:000968800700157https://imec-publications.be/handle/20.500.12860/41621Low temperature source / drain epitaxy and functional silicides: essentials for ultimate contact scalingProceedings paper10.1109/IEDM45625.2022.10019501978-1-6654-8959-1WOS:000968800700157