Gate oxide breakdown in FET devices and circuits: from nanoscale physics to system-level reliability

Kaczer, BenBenKaczerDegraeve, RobinRobinDegraeveRoussel, PhilippePhilippeRousselGroeseneken, GuidoGuidoGroeseneken2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12375Gate oxide breakdown in FET devices and circuits: from nanoscale physics to system-level reliabilityJournal article