Experimental-Modeling Framework for Identifying Defects Responsible for Reliability Issues in 2D FETs

Panarella, LucaLucaPanarellaTyaginov, StanislavStanislavTyaginovKaczer, BenBenKaczerSmets, QuentinQuentinSmetsVerreck, DevinDevinVerreckMakarov, AlexanderAlexanderMakarovSchram, TomTomSchramLin, DennisDennisLinLockhart de la Rosa, Cesar JavierCesar JavierLockhart de la RosaKar, Gouri SankarGouri SankarKarAfanasiev, ValeriValeriAfanasiev2025-04-032024-11-102025-04-0320241944-8244WOS:001343959500001https://imec-publications.be/handle/20.500.12860/44770Experimental-Modeling Framework for Identifying Defects Responsible for Reliability Issues in 2D FETsJournal article10.1021/acsami.4c10888WOS:001343959500001ATOMIC LAYER DEPOSITIONFIELD-EFFECT TRANSISTORS2-DIMENSIONAL MATERIALSAL2O3SILICONGATEHETEROSTRUCTURESPERFORMANCEMEDLINE:39465649