Low-voltage resistive switching within an oxygen-rich Cu/SbTe interface for application in nonvolatile memory

Goux, LudovicLudovicGouxLisoni, JuditJuditLisoniGille, ThomasThomasGilleAttenborough, KarenKarenAttenboroughWouters, DirkDirkWouters2021-10-172021-10-1720081099-0062https://imec-publications.be/handle/20.500.12860/13797Low-voltage resistive switching within an oxygen-rich Cu/SbTe interface for application in nonvolatile memoryJournal article