Single defect studies by means of random telegraph signals in submicron silicon MOSFETs

Simoen, EddyEddySimoenClaeys, CorCorClaeysLukyanchikova, N. B.N. B.LukyanchikovaPetrichuk, M. V.M. V.PetrichukGarbar, N. P.N. P.Garbar2021-10-142021-10-141999https://imec-publications.be/handle/20.500.12860/3829Single defect studies by means of random telegraph signals in submicron silicon MOSFETsProceedings paper