Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide

Wynocker, Isabella R.Isabella R.WynockerZhang, En XiaEn XiaZhangReed, Robert A.Robert A.ReedSchrimpf, Ronald D.Ronald D.SchrimpfArreghini, AntonioAntonioArreghiniBastos, JoaoJoaoBastosvan den Bosch, GeertGeertvan den BoschLinten, DimitriDimitriLintenFleetwood, Daniel M.Daniel M.Fleetwood2025-01-232024-09-212025-01-2320240018-9499WOS:001306481700069https://imec-publications.be/handle/20.500.12860/44557Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling OxideJournal article10.1109/TNS.2024.3431436WOS:0013064817000691/F NOISEUNIFIED MODELTRAPSTECHNOLOGYIMPACT