A Wide-Range Body Biasing Technique for Analog ICs in 22nm FD-SOI Under Total Ionizing Dose Radiation Harsh Environment

Zhao, JinghaoJinghaoZhaoQing, YihongYihongQingLi, ZheyiZheyiLiGao, BoBoGaoPrinzie, JeffreyJeffreyPrinzieSaigné, FrédéricFrédéricSaignéLeroux, PaulPaulLeroux2026-11-092026-11-092024https://imec-publications.be/handle/20.500.12860/60777This paper presents a wide-range body biasing technique for enhancing total ionizing dose (TID) robustness of analog integrated circuits (ICs) in 22nm fully depleted silicon-on-insulator (FD-SOI). A precise SPICE model has been developed to predict the behavior of MOSFETs under TID degradation, based on experimental results from X-ray irradiation tests on a test vehicle fabricated in 22nm FD-SOI. From the simulation in an electronic design automation (EDA) tool, the performance of a bootstrap switch and operational amplifier (OPAMP) with the proposed body biasing configuration exhibit strong TID irradiation robustness.A Wide-Range Body Biasing Technique for Analog ICs in 22nm FD-SOI Under Total Ionizing Dose Radiation Harsh EnvironmentProceedings paper10.1109/radecs61970.2024.11298604WOS:001768636700030