Low VT CMOS using doped Hf-based oxides, TaC-based metals and laser-only anneal

Kubicek, StefanStefanKubicekSchram, TomTomSchramParaschiv, VasileVasileParaschivVos, RitaRitaVosDemand, MarcMarcDemandAdelmann, ChristophChristophAdelmannWitters, ThomasThomasWittersNyns, LauraLauraNynsRagnarsson, Lars-AkeLars-AkeRagnarssonYu, HongYuHongYuYuVeloso, AnabelaAnabelaVelosoSinganamalla, RaghunathRaghunathSinganamallaKauerauf, ThomasThomasKaueraufRohr, ErikaErikaRohrBrus, StephanStephanBrusVrancken, ChristaChristaVranckenChang, VincentVincentChangMitsuhashi, RiichirouRiichirouMitsuhashiAkheyar, AmalAmalAkheyarCho, Hag-JuHag-JuChoHooker, JacobJacobHookerO'Sullivan, BarryBarryO'SullivanChiarella, ThomasThomasChiarellaKerner, ChristophChristophKernerDelabie, AnneliesAnneliesDelabieVan Elshocht, SvenSvenVan ElshochtDe Meyer, KristinKristinDe MeyerDe Gendt, StefanStefanDe GendtAbsil, PhilippePhilippeAbsilHoffmann, Thomas Y.Thomas Y.HoffmannBiesemans, SergeSergeBiesemans2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12422Low VT CMOS using doped Hf-based oxides, TaC-based metals and laser-only annealProceedings paper