InAlN/GaN-on-Si HEMTs with an InGaN Back Barrier for mm-Wave Applications

ElKashlan, RanaRanaElKashlanYu, HaoHaoYuPeralagu, UthayasankaranUthayasankaranPeralaguYadav, SachinSachinYadavKazemi Esfeh, BabakBabakKazemi EsfehAlian, AliRezaAliRezaAlianBanerjee, SourishSourishBanerjeeXiao, DongpingDongpingXiaoParvais, BertrandBertrandParvaisCollaert, NadineNadineCollaert2025-04-102025-02-022025-04-102024979-8-3503-8814-51930-8833WOS:001349548800062https://imec-publications.be/handle/20.500.12860/45148InAlN/GaN-on-Si HEMTs with an InGaN Back Barrier for mm-Wave ApplicationsProceedings paper10.1109/ESSERC62670.2024.10719459979-8-3503-8813-8WOS:001349548800062