Very low temperature epitaxy of group-IV semiconductors for use in finFET, stacked nanowires and monolithic 3D integration

Porret, ClémentClémentPorretHikavyy, AndriyAndriyHikavyyGomez Granados, Juan FernandoJuan FernandoGomez GranadosBaudot, SylvainSylvainBaudotVohra, AnuragAnuragVohraKunert, BernardetteBernardetteKunertDouhard, BastienBastienDouhardBogdanowicz, JanuszJanuszBogdanowiczSchaekers, MarcMarcSchaekersKohen, DavidDavidKohenMargetis, JoeJoeMargetisTolle, JohnJohnTollePetersen Lima, LucasLucasPetersen LimaSammak, AmirAmirSammakScappucci, GiordanoGiordanoScappucciRosseel, ErikErikRosseelLanger, RobertRobertLangerLoo, RogerRogerLoo2021-10-262021-10-262018https://imec-publications.be/handle/20.500.12860/31554Very low temperature epitaxy of group-IV semiconductors for use in finFET, stacked nanowires and monolithic 3D integrationMeeting abstracthttp://ma.ecsdl.org/content/MA2018-02/31/1050.abstract