Schottky barrier height lowering by an increase of the substrate doping in PtSi Schottky barrier source/drain FETs

Lousberg, GregoryGregoryLousbergYu, HongYuHongYuYuFroment, BenoitBenoitFromentAugendre, EmmanuelEmmanuelAugendreDe Keersgieter, AnAnDe KeersgieterLauwers, AnneAnneLauwersLi, M.F.M.F.LiAbsil, PhilippePhilippeAbsilJurczak, GosiaGosiaJurczakBiesemans, SergeSergeBiesemans2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12517Schottky barrier height lowering by an increase of the substrate doping in PtSi Schottky barrier source/drain FETsJournal article