Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography

Van Dal, MarkMarkVan DalCollaert, NadineNadineCollaertDoornbos, GerbenGerbenDoornbosVellianitis, GeorgiosGeorgiosVellianitisCuratola, GilbertoGilbertoCuratolaPawlak, BartekBartekPawlakDuffy, RayRayDuffyJonville, CaroleCaroleJonvilleDegroote, BartBartDegrooteAltamirano Sanchez, EfrainEfrainAltamirano SanchezKunnen, EddyEddyKunnenDemand, MarcMarcDemandBeckx, StephanStephanBeckxVandeweyer, TomTomVandeweyerDelvaux, ChristieChristieDelvauxLeys, FrederikFrederikLeysHikavyy, AndriyAndriyHikavyyRooyackers, RitaRitaRooyackersKaiser, M.M.KaiserWeemaes, R.G.R.R.G.R.WeemaesBiesemans, SergeSergeBiesemansJurczak, GosiaGosiaJurczakKottantharayil, AnilAnilKottantharayilWitters, LiesbethLiesbethWittersLander, RobRobLander2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/13026Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithographyProceedings paper