Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N-2 remote-plasma treatment

Huang, P.P.HuangLuc, Q. H.Q. H.LucChang, E. Y.E. Y.ChangSibaja-Hernandez, ArturoArturoSibaja-HernandezHsu, C. W.C. W.HsuWu, J. Y.J. Y.WuKo, H. L.H. L.KoTran, N. A.N. A.TranCollaert, NadineNadineCollaert2021-12-102021-11-022021-12-1020212158-3226WOS:000630443900012https://imec-publications.be/handle/20.500.12860/38109Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N-2 remote-plasma treatmentJournal article10.1063/5.0037378WOS:000630443900012