Feasibility of 250 nm gate patterning using i-line with OPC

Van Driessche, VeerleVeerleVan DriesscheFinders, JoJoFindersTritchkov, AlexanderAlexanderTritchkovRonse, KurtKurtRonseVan den hove, LucLucVan den hoveTzviatkov, PlamenPlamenTzviatkov2021-10-012021-10-011998https://imec-publications.be/handle/20.500.12860/3039Feasibility of 250 nm gate patterning using i-line with OPCJournal article