Influence of precursor gas source on defect properties in Si1xGex epitaxial thin films

Ike, ShinichiShinichiIkeSimoen, EddyEddySimoenShimura, YosukeYosukeShimuraHikavyy, AndriyAndriyHikavyyVandervorst, WilfriedWilfriedVandervorstLoo, RogerRogerLooTakeuchi, WakanaWakanaTakeuchiNakatsuka, OsamuOsamuNakatsukaZaima, ShigeakiShigeakiZaima2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/25411Influence of precursor gas source on defect properties in Si1xGex epitaxial thin filmsMeeting abstract