Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM ( a-VMCO) by RTN and CVS techniques for memory window improvement

Ma, JigangJigangMaChai, ZhengZhengChaiZhang, WeidongWeidongZhangGovoreanu, BogdanBogdanGovoreanuZhang, Jiang F.Jiang F.ZhangJi, Z.Z.JiBenbakhti, B.B.BenbakhtiGroeseneken, GuidoGuidoGroesenekenJurczak, MalgorzataMalgorzataJurczak2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/26934Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM ( a-VMCO) by RTN and CVS techniques for memory window improvementProceedings paper