Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors

Wu, Tian-LiTian-LiWuMarcon, DenisDenisMarconYou, ShuzhenShuzhenYouPosthuma, NielsNielsPosthumaBakeroot, BenoitBenoitBakerootStoffels, SteveSteveStoffelsVan Hove, MarleenMarleenVan HoveGroeseneken, GuidoGuidoGroesenekenDecoutere, StefaanStefaanDecoutere2021-10-232021-10-2320150741-3106https://imec-publications.be/handle/20.500.12860/26195Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistorsJournal articlehttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7180329