Ground plane influence on enhanced dynamic threshold UTBB SOI nMOSFETs

Sasaki, K.R.A.K.R.A.SasakiManini, M.BM.BManiniMartino, J.AJ.AMartinoAoulaiche, MarcMarcAoulaicheSimoen, EddyEddySimoenWitters, LiesbethLiesbethWittersClaeys, CorCorClaeys2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24478Ground plane influence on enhanced dynamic threshold UTBB SOI nMOSFETsProceedings paper