Degradation of high resistivity silicon float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation

Rafi, J.M.J.M.RafiBoulord, C.C.BoulordHayama, K.K.HayamaOhyama, H.H.OhyamaCampabadal, F.F.CampabadalPellegrini, G.G.PellegriniLozano, M.M.LozanoSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/14351Degradation of high resistivity silicon float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiationOral presentation