Impact of gate material on low-frequency noise of n-MOSFETs with 1.5 nm SiON gate dielectric: testing the limits of the number fluctuations theory

Srinivasan, PurushothamanPurushothamanSrinivasanSimoen, EddyEddySimoenPantisano, LuigiLuigiPantisanoClaeys, CorCorClaeysMisra, D.D.Misra2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/11263Impact of gate material on low-frequency noise of n-MOSFETs with 1.5 nm SiON gate dielectric: testing the limits of the number fluctuations theoryProceedings paper