Predictive As-grown-generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodes

Gao, R.R.GaoJi, ZhigangZhigangJiHatta, S.M.S.M.HattaZhang, J.F.J.F.ZhangFranco, JacopoJacopoFrancoKaczer, BenBenKaczerZhang, W.W.ZhangDuan, M.M.DuanDe Gendt, StefanStefanDe GendtLinten, DimitriDimitriLintenGroeseneken, GuidoGuidoGroesenekenBi, J.J.BiLiu, M.M.Liu2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/26639Predictive As-grown-generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodesProceedings paper