A new degradation model and lifetime extrapolation technique for lightly doped drain NMOSFETs under hot-carrier degradation

Dreesen, R.R.DreesenCroes, KrisKrisCroesManca, JeanJeanMancaDe Ceuninck, WardWardDe CeuninckDe Schepper, LucLucDe SchepperPergoot, A.A.PergootGroeseneken, GuidoGuidoGroeseneken2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5268A new degradation model and lifetime extrapolation technique for lightly doped drain NMOSFETs under hot-carrier degradationJournal article