Analytical model for the threshold voltage of p-(Al)GaN high-electron-mobility transistors

Bakeroot, BenoitBenoitBakerootStockman, ArnoArnoStockmanPosthuma, NielsNielsPosthumaStoffels, SteveSteveStoffelsDecoutere, StefaanStefaanDecoutere2021-10-252021-10-2520180018-9383https://imec-publications.be/handle/20.500.12860/30190Analytical model for the threshold voltage of p-(Al)GaN high-electron-mobility transistorsJournal articlehttps://ieeexplore.ieee.org/document/8141943/