High depth resolution analysis of Si/SiGe multilayers with the atom probe

Koelling, SebastianSebastianKoellingGilbert, MatthieuMatthieuGilbertGoossens, JozefienJozefienGoossensHikavyy, AndriyAndriyHikavyyRichard, OlivierOlivierRichardVandervorst, WilfriedWilfriedVandervorst2021-10-172021-10-1720090003-6951https://imec-publications.be/handle/20.500.12860/15615High depth resolution analysis of Si/SiGe multilayers with the atom probeJournal article