Secondary ion signal variation during oxygen build-up in Si

Tian, ChunshengChunshengTianBeyer, GeraldGeraldBeyerVandervorst, WilfriedWilfriedVandervorstKilner, J. A.J. A.Kilner2021-09-302021-09-301997https://imec-publications.be/handle/20.500.12860/2179Secondary ion signal variation during oxygen build-up in SiProceedings paper