Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon

Trauwaert, Marie-AstridMarie-AstridTrauwaertVanhellemont, JanJanVanhellemontMaes, HermanHermanMaesVan Bavel, MiekeMiekeVan BavelLangouche, G.G.LangoucheStesmans, AndreAndreStesmansClauws, P.P.Clauws2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1538Influence of oxygen and carbon on the generation and annihilation of radiation defects in siliconJournal article